Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET fo
TOKYO - Wednesday, March 6th 2013 [ME NewsWire]
Uses "DPAK+" package suited for high-speed switching
(BUSINESS WIRE)-- Toshiba Corporation (TOKYO:6502) has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications. The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS VIII-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors. The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.
Drain-to-source voltage VDSS (V)
Drain Current ID (A)
Low ON-resistance (VGS=10V)
RDS(ON) = 5.5mΩ(typ.)
Low leakage current IDSS=10μA (max) (VDS=rated voltage)
"DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors.
*Follow this link for more on this product. http://www.semicon.toshiba.co.jp/eng/product/transistor/selection/topics/1268301_2470.html
Customer Inquiries Power Device Sales & Marketing Department +81-3-3457-3416
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